- Direct write of wafers up to 6” in diameter
- Ultrafine isolated lines down to 8 nm in width
- Write-fields sizes of 75, 150, 300, 600, 1200 μm (80 kV beam voltages)
- Stitching error under 30 nm
- Pattern overlay with 35 nm accuracy
- Gratings with periods down to 40 nm
- Direct write lithography of chirped gratings, photonic crystals and other nano-structures
- Compatible with GDSII and DXF CAD files
- Availability of proximity effect correction software to correct for electron forward and back- scattering to define complex patterns